Charge-pumping studies of hot-carrier effects in submicrometer PMOSFETs
In this study, a constant amplitude charge-pumping (CP) measurement system was successfully setup. This system was used to analyse hot-carrier effects in submicrometer p-channel MOSFETs (metal-oxide-semiconductor field effect transistor) during hot-carrier stress and after termination of hot-carrier...
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格式: | Theses and Dissertations |
語言: | English |
出版: |
2009
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在線閱讀: | http://hdl.handle.net/10356/19732 |
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機構: | Nanyang Technological University |
語言: | English |