Charge-pumping studies of hot-carrier effects in submicrometer PMOSFETs

Charge-pumping studies of hot-carrier effects in submicrometer PMOSFETs

In this study, a constant amplitude charge-pumping (CP) measurement system was successfully setup. This system was used to analyse hot-carrier effects in submicrometer p-channel MOSFETs (metal-oxide-semiconductor field effect transistor) during hot-carrier stress and after termination of hot-carrier...

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Main Author: Ang, Chew Hoe
Other Authors: Wong, Terence Kin Shun
Format: Theses and Dissertations
Language:English
Published: 2009
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:http://hdl.handle.net/10356/19732
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Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-19732
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spelling sg-ntu-dr.10356-197322023-07-04T16:03:28Z Charge-pumping studies of hot-carrier effects in submicrometer PMOSFETs Ang, Chew Hoe Wong, Terence Kin Shun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits In this study, a constant amplitude charge-pumping (CP) measurement system was successfully setup. This system was used to analyse hot-carrier effects in submicrometer p-channel MOSFETs (metal-oxide-semiconductor field effect transistor) during hot-carrier stress and after termination of hot-carrier stress. Master of Engineering 2009-12-14T06:31:59Z 2009-12-14T06:31:59Z 1995 1995 Thesis http://hdl.handle.net/10356/19732 en NANYANG TECHNOLOGICAL UNIVERSITY 113 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Ang, Chew Hoe
Charge-pumping studies of hot-carrier effects in submicrometer PMOSFETs
description In this study, a constant amplitude charge-pumping (CP) measurement system was successfully setup. This system was used to analyse hot-carrier effects in submicrometer p-channel MOSFETs (metal-oxide-semiconductor field effect transistor) during hot-carrier stress and after termination of hot-carrier stress.
author2 Wong, Terence Kin Shun
author_facet Wong, Terence Kin Shun
Ang, Chew Hoe
format Theses and Dissertations
author Ang, Chew Hoe
author_sort Ang, Chew Hoe
title Charge-pumping studies of hot-carrier effects in submicrometer PMOSFETs
title_short Charge-pumping studies of hot-carrier effects in submicrometer PMOSFETs
title_full Charge-pumping studies of hot-carrier effects in submicrometer PMOSFETs
title_fullStr Charge-pumping studies of hot-carrier effects in submicrometer PMOSFETs
title_full_unstemmed Charge-pumping studies of hot-carrier effects in submicrometer PMOSFETs
title_sort charge-pumping studies of hot-carrier effects in submicrometer pmosfets
publishDate 2009
url http://hdl.handle.net/10356/19732
_version_ 1772825676006555648

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