Device design, characterization and modeling of inductors and interconnects for RFIC applications
Escalating demands for personal wireless communication equipment have spearheaded development of affordable RF System-on-Chip (SoC) solutions. Silicon is believed to be the most suitable material that can satisfy the demands of this rapidly growing wireless market. Advancements in technology have co...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2009
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| Online Access: | https://hdl.handle.net/10356/20669 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Escalating demands for personal wireless communication equipment have spearheaded development of affordable RF System-on-Chip (SoC) solutions. Silicon is believed to be the most suitable material that can satisfy the demands of this rapidly growing wireless market. Advancements in technology have continued to enhance the cutoff frequencies of active devices such as MOSFETs and SiGe HBTs. Nonetheless, low resistive bulk silicon and high resistive metallization have made on-chip inductors and interconnects major obstacles to achieving exemplary circuit characteristics at giga-hertz frequencies. |
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