Size, composition and thermal induced band gap changing of nanostructured semiconductors
A nanostructure semiconductor can be divided into three groups such as group-IV from elemental, III-V and II-VI from compound materials. The band gap energy changes effectively if a function of temperature changes because the crystal lattice expansion and the inter-atomic bonds are weakened. A weake...
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| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
2010
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| 在線閱讀: | http://hdl.handle.net/10356/20749 |
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| 機構: | Nanyang Technological University |
| 語言: | English |