Monolithic integration of GaAs/A1GaAS photonic devices using quantum well intermixing

In this project, a novel QWI technique, based on the impurity free vacancies induced disordering (IFVD) technique, has been developed. This technique uses undoped and Er-doped sol-get SiO2 to achieve selective intermixing across a GaAs/AiGaAs laser structure.

Saved in:

Bibliographic Details
Main Authors:	Chan, Yuen Chuen, Ooi, Boon Siew, Lam, Yee Loy
Other Authors:	School of Electrical and Electronic Engineering
Format:	Research Report
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:	http://hdl.handle.net/10356/2777
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-2777
record_format	dspace
spelling	sg-ntu-dr.10356-27772023-03-04T03:25:02Z Monolithic integration of GaAs/A1GaAS photonic devices using quantum well intermixing Chan, Yuen Chuen Ooi, Boon Siew Lam, Yee Loy School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics In this project, a novel QWI technique, based on the impurity free vacancies induced disordering (IFVD) technique, has been developed. This technique uses undoped and Er-doped sol-get SiO2 to achieve selective intermixing across a GaAs/AiGaAs laser structure. RG 47/96 2008-09-17T09:14:34Z 2008-09-17T09:14:34Z 2001 2001 Research Report http://hdl.handle.net/10356/2777 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Chan, Yuen Chuen Ooi, Boon Siew Lam, Yee Loy Monolithic integration of GaAs/A1GaAS photonic devices using quantum well intermixing
description	In this project, a novel QWI technique, based on the impurity free vacancies induced disordering (IFVD) technique, has been developed. This technique uses undoped and Er-doped sol-get SiO2 to achieve selective intermixing across a GaAs/AiGaAs laser structure.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Chan, Yuen Chuen Ooi, Boon Siew Lam, Yee Loy
format	Research Report
author	Chan, Yuen Chuen Ooi, Boon Siew Lam, Yee Loy
author_sort	Chan, Yuen Chuen
title	Monolithic integration of GaAs/A1GaAS photonic devices using quantum well intermixing
title_short	Monolithic integration of GaAs/A1GaAS photonic devices using quantum well intermixing
title_full	Monolithic integration of GaAs/A1GaAS photonic devices using quantum well intermixing
title_fullStr	Monolithic integration of GaAs/A1GaAS photonic devices using quantum well intermixing
title_full_unstemmed	Monolithic integration of GaAs/A1GaAS photonic devices using quantum well intermixing
title_sort	monolithic integration of gaas/a1gaas photonic devices using quantum well intermixing
publishDate	2008
url	http://hdl.handle.net/10356/2777
_version_	1759858000574545920

Monolithic integration of GaAs/A1GaAS photonic devices using quantum well intermixing

Similar Items