Monolithic integration of GaAs/A1GaAS photonic devices using quantum well intermixing

• Main Authors: Chan, Yuen Chuen, Ooi, Boon Siew, Lam, Yee Loy
• Other Authors: School of Electrical and Electronic Engineering
• Format: Research Report
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: http://hdl.handle.net/10356/2777
• Institution: Nanyang Technological University

In this project, a novel QWI technique, based on the impurity free vacancies induced disordering (IFVD) technique, has been developed. This technique uses undoped and Er-doped sol-get SiO2 to achieve selective intermixing across a GaAs/AiGaAs laser structure.