Monolithic integration of GaAs/A1GaAS photonic devices using quantum well intermixing

• المؤلفون الرئيسيون: Chan, Yuen Chuen, Ooi, Boon Siew, Lam, Yee Loy
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Research Report
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/2777

In this project, a novel QWI technique, based on the impurity free vacancies induced disordering (IFVD) technique, has been developed. This technique uses undoped and Er-doped sol-get SiO2 to achieve selective intermixing across a GaAs/AiGaAs laser structure.