Monolithic integration of heterojunction bipolar transistors and high electron mobility transistors

In this investigation, studies were undertaken for the possibility of monolithic integration of HEMTs and HBTs.

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Bibliographic Details
Main Authors: Radhakrishnan, K., Ng, Geok Ing., Yoon, Soon Fatt.
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/2822
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Institution: Nanyang Technological University
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