RF modelling of semiconductor devices

• المؤلفون الرئيسيون: Ma, Jian-Guo, Yeo, Kiat Seng, Do, Manh Anh
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Research Report
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/2868

This report focuses on the approaches to characterize the deep submicron-meter MOSFETs operating both in DC and in high frequency region with different dimensions.