Band structures and optical properties of InGaNAs quantum wells
This thesis presents theoretical studies of electronic band structures and optical properties for compressively strained InGaAsN/GaAs quantum well (QW). We have used a realistic 10-band k.p model for the detailed calculation of band structures and have even studied the QW structure with tensile GaAs...
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | https://hdl.handle.net/10356/3436 |
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| Institution: | Nanyang Technological University |
| Summary: | This thesis presents theoretical studies of electronic band structures and optical properties for compressively strained InGaAsN/GaAs quantum well (QW). We have used a realistic 10-band k.p model for the detailed calculation of band structures and have even studied the QW structure with tensile GaAs/GaAsP/GaAs compounded barrier. Strained conduction band offset ratio (Qc) of InGaAsN/GaAs was proposed. Together with band gap energy (EG) and electron effective mass (m*) based on band-anticrossing (BAC) model, we are able to predict quantum well transition energies that is reasonably close to the reported experimental values. Model-dependent prediction of transition energy (Eeh) and energy separation of conduction subbands were also conducted using additional 8-band and 6-band k.p models, which neglect nitrogen related energy level (EN) and conduction-valence band interaction, respectively. |
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