Band structures and optical properties of InGaNAs quantum wells

This thesis presents theoretical studies of electronic band structures and optical properties for compressively strained InGaAsN/GaAs quantum well (QW). We have used a realistic 10-band k.p model for the detailed calculation of band structures and have even studied the QW structure with tensile GaAs...

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Main Author: Ng, Say Tyam
Other Authors: Fan, Weijun
Format: Theses and Dissertations
Published: 2008
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Online Access:https://hdl.handle.net/10356/3436
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-34362023-07-04T17:29:09Z Band structures and optical properties of InGaNAs quantum wells Ng, Say Tyam Fan, Weijun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics This thesis presents theoretical studies of electronic band structures and optical properties for compressively strained InGaAsN/GaAs quantum well (QW). We have used a realistic 10-band k.p model for the detailed calculation of band structures and have even studied the QW structure with tensile GaAs/GaAsP/GaAs compounded barrier. Strained conduction band offset ratio (Qc) of InGaAsN/GaAs was proposed. Together with band gap energy (EG) and electron effective mass (m*) based on band-anticrossing (BAC) model, we are able to predict quantum well transition energies that is reasonably close to the reported experimental values. Model-dependent prediction of transition energy (Eeh) and energy separation of conduction subbands were also conducted using additional 8-band and 6-band k.p models, which neglect nitrogen related energy level (EN) and conduction-valence band interaction, respectively. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:30:10Z 2008-09-17T09:30:10Z 2007 2007 Thesis Ng, S. T. (2007). Band structures and optical properties of InGaNAs quantum wells. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3436 10.32657/10356/3436 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Ng, Say Tyam
Band structures and optical properties of InGaNAs quantum wells
description This thesis presents theoretical studies of electronic band structures and optical properties for compressively strained InGaAsN/GaAs quantum well (QW). We have used a realistic 10-band k.p model for the detailed calculation of band structures and have even studied the QW structure with tensile GaAs/GaAsP/GaAs compounded barrier. Strained conduction band offset ratio (Qc) of InGaAsN/GaAs was proposed. Together with band gap energy (EG) and electron effective mass (m*) based on band-anticrossing (BAC) model, we are able to predict quantum well transition energies that is reasonably close to the reported experimental values. Model-dependent prediction of transition energy (Eeh) and energy separation of conduction subbands were also conducted using additional 8-band and 6-band k.p models, which neglect nitrogen related energy level (EN) and conduction-valence band interaction, respectively.
author2 Fan, Weijun
author_facet Fan, Weijun
Ng, Say Tyam
format Theses and Dissertations
author Ng, Say Tyam
author_sort Ng, Say Tyam
title Band structures and optical properties of InGaNAs quantum wells
title_short Band structures and optical properties of InGaNAs quantum wells
title_full Band structures and optical properties of InGaNAs quantum wells
title_fullStr Band structures and optical properties of InGaNAs quantum wells
title_full_unstemmed Band structures and optical properties of InGaNAs quantum wells
title_sort band structures and optical properties of inganas quantum wells
publishDate 2008
url https://hdl.handle.net/10356/3436
_version_ 1772826081097678848