A study on electromigration by driving force approach for submicron copper interconnect

The prime interest of this thesis work is to investigate the physics of electromigration failure in submicron Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. Experiments ar...

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Bibliographic Details
Main Author:	Roy, Arijit
Other Authors:	Tan Cher Ming
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Online Access:	https://hdl.handle.net/10356/3479
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-3479
record_format	dspace
spelling	sg-ntu-dr.10356-34792023-07-04T17:32:34Z A study on electromigration by driving force approach for submicron copper interconnect Roy, Arijit Tan Cher Ming School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits The prime interest of this thesis work is to investigate the physics of electromigration failure in submicron Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. Experiments are conducted and good correlations with model predictions are obtained. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:30:48Z 2008-09-17T09:30:48Z 2007 2007 Thesis Roy, A. (2007). A study on electromigration by driving force approach for submicron copper interconnect. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3479 10.32657/10356/3479 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Roy, Arijit A study on electromigration by driving force approach for submicron copper interconnect
description	The prime interest of this thesis work is to investigate the physics of electromigration failure in submicron Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. Experiments are conducted and good correlations with model predictions are obtained.
author2	Tan Cher Ming
author_facet	Tan Cher Ming Roy, Arijit
format	Theses and Dissertations
author	Roy, Arijit
author_sort	Roy, Arijit
title	A study on electromigration by driving force approach for submicron copper interconnect
title_short	A study on electromigration by driving force approach for submicron copper interconnect
title_full	A study on electromigration by driving force approach for submicron copper interconnect
title_fullStr	A study on electromigration by driving force approach for submicron copper interconnect
title_full_unstemmed	A study on electromigration by driving force approach for submicron copper interconnect
title_sort	study on electromigration by driving force approach for submicron copper interconnect
publishDate	2008
url	https://hdl.handle.net/10356/3479
_version_	1772826671591718912

A study on electromigration by driving force approach for submicron copper interconnect

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