Failure mechanisms in HfO2 high-k gate stack MOSFETs
The failure mechanisms in HfO2 high-k/polycrystalline-silicon (poly-Si) and HfO2 high-k/TaN/TiN gate stack n/p-metal-oxide-semiconductor field effect transistors (MOSFETs) under inversion and accumulation mode constant voltage stress have been studied both electrically and physically with the aid...
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| 格式: | Theses and Dissertations |
| 出版: |
2008
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/3538 |
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| 機構: | Nanyang Technological University |