Failure mechanisms in HfO2 high-k gate stack MOSFETs

Failure mechanisms in HfO2 high-k gate stack MOSFETs

The failure mechanisms in HfO2 high-k/polycrystalline-silicon (poly-Si) and HfO2 high-k/TaN/TiN gate stack n/p-metal-oxide-semiconductor field effect transistors (MOSFETs) under inversion and accumulation mode constant voltage stress have been studied both electrically and physically with the aid...

Saved in:

書目詳細資料
主要作者:	Ranjan Rakesh
其他作者:	Pey Kin Leong
格式:	Theses and Dissertations
出版:	2008
主題:	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
在線閱讀:	https://hdl.handle.net/10356/3538
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University

相似書籍

Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuits
由: Shen, C., et al.
出版: (2014)

Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam
由: Ng, Chi Yung, et al.
出版: (2010)

The role of the disordered HfO2 network in the high- κ n-MOSFET shallow electron trapping
由: Gu, Chenjie, et al.
出版: (2019)

A new breakdown failure mechanism in HfO 2 gate dielectric
由: Ranjan, R., et al.
出版: (2014)

Quantum tunneling and scalability of HfO2 and HfAlO gate stacks
由: Hou, Y.T., et al.
出版: (2014)

TDDB characteristics of ultra-thin HfN/HfO2 gate stack
由: Yang, H., et al.
出版: (2014)

SiGe on insulator MOSFET integrated with Schottky source/drain and HfO 2/TaN gate stack
由: Gao, F., et al.
出版: (2014)

Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs
由: Lim, Wai Tat.
出版: (2008)

Nanoscale strained-Si/SiGe and double-gate MOSFET modeling
由: Karthik Chandrasekaran
出版: (2010)

Study of charge distribution and charge loss in dual-layer metal-nanocrystal-embedded high-κ/SiO2 gate stack
由: Lwin, Z. Z., et al.
出版: (2013)

Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS Devices
由: Yu, H.Y., et al.
出版: (2014)

Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications
由: Yu, H.Y., et al.
出版: (2014)

Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment
由: Ashwin Srinivas.
出版: (2010)

Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacks
由: Hou, Y.T., et al.
出版: (2014)

CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack
由: Peng, J.W., et al.
出版: (2014)

Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process
由: Kang, J.F., et al.
出版: (2014)

The link between NBTI and TDDB of high-k gate P-MOSFETs
由: Gao, Yuan, et al.
出版: (2013)

Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation
由: Wu, N., et al.
出版: (2014)

Reliability analysis of thin HfO2/SiO2 gate dielectric stack
由: Samanta, P., et al.
出版: (2014)

Asymmetric energy distribution of interface traps in germanium MOSFETs with HfO2 gate dielectric
由: Xie, R., et al.
出版: (2014)

Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack
由: Lin, J., et al.
出版: (2014)

MOS Characteristics of synthesized HfAlON-HfO2 stack using AlN-HfO2
由: Park, C.S., et al.
出版: (2014)

Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design
由: Kim, Tony Tae-Hyoung, et al.
出版: (2011)

Design and analysis of double-gate MOSFETs for ultra-low power radio frequency identification (RFID) : device and circuit co-design
由: Vaddi, Ramesh., et al.
出版: (2012)

Mobility enhancement in TaN metal-gate MOSFETs using tantalum incorporated HfO2 gate dielectric
由: Yu, X., et al.
出版: (2014)

Electrical characterization of bias temperature instability in MOSFETs with the ultrathin SiON and la-doped HfSiO gate dielectrics
由: Du, Guoan.
出版: (2013)

Highly transparent ITO/HfO2/ITO device for visible-light sensing
由: Kalaga, Pranav Sairam, et al.
出版: (2021)

Negative U traps in HfO 2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETs
由: Shen, C., et al.
出版: (2014)

Fast Vth instability in HfO2 gate dielectric MOSFETs and Its impact on digital circuits
由: Shen, C., et al.
出版: (2014)

BTI and charge trapping in germanium p- And n-MOSFETs with CVD HfO 2 gate dielectric
由: Wu, N., et al.
出版: (2014)

TDDB and Polarity-Dependent Reliability of High-Quality, Ultrathin CVD HfO 2 Gate Stack with TaN Gate Electrode
由: Lee, S., et al.
出版: (2014)

Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping
由: Wu, L., et al.
出版: (2013)

Design of high performance quarter-micron retrograde well P-channel MOSFET
由: Swe, Toe Naing.
出版: (2008)

Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks : a nanoscopic study
由: Shubhakar, Kalya, et al.
出版: (2014)

New insights in hf based high-k gate dielectrics in mosfets
由: Li, M.-F., et al.
出版: (2014)

Statistical characterization and reliability modeling of novel high-K gate dielectric stacks
由: Nagarajan Raghavan
出版: (2012)

A new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integration
由: Yew, K. S., et al.
出版: (2013)

Gate stack engineering of germanium mosfets with high-K dielectrics
由: WU NAN
出版: (2010)

Development and characterization of high-k gate stack for Ge MOSFETs
由: Xie, R., et al.
出版: (2014)

Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting traps
由: Sa, N., et al.
出版: (2014)