Failure mechanisms in HfO2 high-k gate stack MOSFETs

• المؤلف الرئيسي: Ranjan Rakesh
• مؤلفون آخرون: Pey Kin Leong
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/3538

The failure mechanisms in HfO2 high-k/polycrystalline-silicon (poly-Si) and HfO2 high-k/TaN/TiN gate stack n/p-metal-oxide-semiconductor field effect transistors (MOSFETs) under inversion and accumulation mode constant voltage stress have been studied both electrically and physically with the aid...