Characterization of flourosilicate glass (FSG) as low dielectric constant material

The characterization of flourine doped oxide (FSG) film as a low-k- dielectric material involved three main parts. In the first part of the project, the effect flourine incorporation and increasing flourine content on the film structure and dielectric constant were studied. The incorporation of Si-...

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Main Author: Teh, Young Way.
Other Authors: Wong, Terence Kin Shun
Format: Theses and Dissertations
Published: 2008
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Online Access:http://hdl.handle.net/10356/3542
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-35422023-07-04T16:25:38Z Characterization of flourosilicate glass (FSG) as low dielectric constant material Teh, Young Way. Wong, Terence Kin Shun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials The characterization of flourine doped oxide (FSG) film as a low-k- dielectric material involved three main parts. In the first part of the project, the effect flourine incorporation and increasing flourine content on the film structure and dielectric constant were studied. The incorporation of Si-Fx bonds generates significant structural change in the SiO matrix. Master of Engineering 2008-09-17T09:31:57Z 2008-09-17T09:31:57Z 2002 2002 Thesis http://hdl.handle.net/10356/3542 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Teh, Young Way.
Characterization of flourosilicate glass (FSG) as low dielectric constant material
description The characterization of flourine doped oxide (FSG) film as a low-k- dielectric material involved three main parts. In the first part of the project, the effect flourine incorporation and increasing flourine content on the film structure and dielectric constant were studied. The incorporation of Si-Fx bonds generates significant structural change in the SiO matrix.
author2 Wong, Terence Kin Shun
author_facet Wong, Terence Kin Shun
Teh, Young Way.
format Theses and Dissertations
author Teh, Young Way.
author_sort Teh, Young Way.
title Characterization of flourosilicate glass (FSG) as low dielectric constant material
title_short Characterization of flourosilicate glass (FSG) as low dielectric constant material
title_full Characterization of flourosilicate glass (FSG) as low dielectric constant material
title_fullStr Characterization of flourosilicate glass (FSG) as low dielectric constant material
title_full_unstemmed Characterization of flourosilicate glass (FSG) as low dielectric constant material
title_sort characterization of flourosilicate glass (fsg) as low dielectric constant material
publishDate 2008
url http://hdl.handle.net/10356/3542
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