Experimental study of copper contamination in VLSI technology

Experimental study of copper contamination in VLSI technology

This thesis records the details of two investigations that were performed. The first investigation, believed to be the first of its kind, was on the study of the feasibility of using second harmonic microscopy (SHM) to measure copper concentration and possible diffusion mechanisms at the surfaces an...

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Main Author: Tey, Shih Hwee.
Other Authors: Prasad, Krishnamachar
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Online Access:http://hdl.handle.net/10356/3568
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-35682023-07-04T15:45:50Z Experimental study of copper contamination in VLSI technology Tey, Shih Hwee. Prasad, Krishnamachar School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials This thesis records the details of two investigations that were performed. The first investigation, believed to be the first of its kind, was on the study of the feasibility of using second harmonic microscopy (SHM) to measure copper concentration and possible diffusion mechanisms at the surfaces and interfaces of microelectronic interconnect structures. The second investigation was on the impact of intentional copper contamination on the performance of semiconductor devices. Copper contamination, both from backside and frontside of wafers were studied Master of Engineering 2008-09-17T09:32:35Z 2008-09-17T09:32:35Z 2003 2003 Thesis http://hdl.handle.net/10356/3568 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Tey, Shih Hwee.
Experimental study of copper contamination in VLSI technology
description This thesis records the details of two investigations that were performed. The first investigation, believed to be the first of its kind, was on the study of the feasibility of using second harmonic microscopy (SHM) to measure copper concentration and possible diffusion mechanisms at the surfaces and interfaces of microelectronic interconnect structures. The second investigation was on the impact of intentional copper contamination on the performance of semiconductor devices. Copper contamination, both from backside and frontside of wafers were studied
author2 Prasad, Krishnamachar
author_facet Prasad, Krishnamachar
Tey, Shih Hwee.
format Theses and Dissertations
author Tey, Shih Hwee.
author_sort Tey, Shih Hwee.
title Experimental study of copper contamination in VLSI technology
title_short Experimental study of copper contamination in VLSI technology
title_full Experimental study of copper contamination in VLSI technology
title_fullStr Experimental study of copper contamination in VLSI technology
title_full_unstemmed Experimental study of copper contamination in VLSI technology
title_sort experimental study of copper contamination in vlsi technology
publishDate 2008
url http://hdl.handle.net/10356/3568
_version_ 1772826844650799104

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