A study on ion implant uniformity
As a result of the recombination of electrons with the positive dopant ion species, neutral dopant atoms (no charge) are created during the process of ion being injected into wafer. Since the Faraday System (an instrument to measure Beam current) can only count charged atoms, the neutral dopant atom...
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2008
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sg-ntu-dr.10356-38932023-07-04T15:13:58Z A study on ion implant uniformity Chen, Xiao Song. Ling, Keck Voon School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors As a result of the recombination of electrons with the positive dopant ion species, neutral dopant atoms (no charge) are created during the process of ion being injected into wafer. Since the Faraday System (an instrument to measure Beam current) can only count charged atoms, the neutral dopant atoms are not counted resulting in an inaccurate dose measurement. Master of Science (Computer Control and Automation) 2008-09-17T09:39:50Z 2008-09-17T09:39:50Z 2003 2003 Thesis http://hdl.handle.net/10356/3893 Nanyang Technological University application/pdf |
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Asia |
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Singapore Singapore |
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Chen, Xiao Song. A study on ion implant uniformity |
| description |
As a result of the recombination of electrons with the positive dopant ion species, neutral dopant atoms (no charge) are created during the process of ion being injected into wafer. Since the Faraday System (an instrument to measure Beam current) can only count charged atoms, the neutral dopant atoms are not counted resulting in an inaccurate dose measurement. |
| author2 |
Ling, Keck Voon |
| author_facet |
Ling, Keck Voon Chen, Xiao Song. |
| format |
Theses and Dissertations |
| author |
Chen, Xiao Song. |
| author_sort |
Chen, Xiao Song. |
| title |
A study on ion implant uniformity |
| title_short |
A study on ion implant uniformity |
| title_full |
A study on ion implant uniformity |
| title_fullStr |
A study on ion implant uniformity |
| title_full_unstemmed |
A study on ion implant uniformity |
| title_sort |
study on ion implant uniformity |
| publishDate |
2008 |
| url |
http://hdl.handle.net/10356/3893 |
| _version_ |
1772828161456734208 |