A study on ion implant uniformity

• المؤلف الرئيسي: Chen, Xiao Song.
• مؤلفون آخرون: Ling, Keck Voon
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/3893
• المؤسسة: Nanyang Technological University

As a result of the recombination of electrons with the positive dopant ion species, neutral dopant atoms (no charge) are created during the process of ion being injected into wafer. Since the Faraday System (an instrument to measure Beam current) can only count charged atoms, the neutral dopant atom...