A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application

120 p.

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Bibliographic Details
Main Author:	Xie, Shiyong
Other Authors:	Yoon Soon Fatt
Format:	Theses and Dissertations
Published:	2010
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:	https://hdl.handle.net/10356/39133
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Institution:	Nanyang Technological University

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spelling	sg-ntu-dr.10356-391332023-07-04T17:04:39Z A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application Xie, Shiyong Yoon Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics 120 p. Dilute nitride InGaAsN has shown potential application in heteroj unction bipolar transistors (HBTs) on GaAs substrates with low turn-on voltage. The application is based on two features of InGaAsN: firstly, InGaAsN can be lattice-matched to GaAs; secondly, the incorporation of small amounts of N into (In)GaAs reduces the band gap drastically. Hence, the growth and characterization of (In)GaAsN, especially p-type InGaAsN were investigated in this thesis, due to its potential usage in n-p-n HBT devices as the base layer. DOCTOR OF PHILOSOPHY (EEE) 2010-05-21T04:45:09Z 2010-05-21T04:45:09Z 2006 2006 Thesis Xie, S. (2006). A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/39133 10.32657/10356/39133 application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Xie, Shiyong A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application
description	120 p.
author2	Yoon Soon Fatt
author_facet	Yoon Soon Fatt Xie, Shiyong
format	Theses and Dissertations
author	Xie, Shiyong
author_sort	Xie, Shiyong
title	A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application
title_short	A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application
title_full	A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application
title_fullStr	A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application
title_full_unstemmed	A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application
title_sort	study of dilute nitride compounds grown by molecular beam epitaxy for electronic application
publishDate	2010
url	https://hdl.handle.net/10356/39133
_version_	1772826241881079808

A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application

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