A study of dilute nitride compounds grown by molecular beam epitaxy for electronic application
120 p.
Saved in:
Main Author: | Xie, Shiyong |
---|---|
Other Authors: | Yoon Soon Fatt |
Format: | Theses and Dissertations |
Published: |
2010
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/39133 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Similar Items
-
Electronic structures and optical properties of dilute nitride quantum dots
by: Chen, Jian
Published: (2012) -
The molecular beam epitaxy growth of InSbN compound and its characterization
by: Lim, Kim Peng
Published: (2012) -
Characterisation of Be-doped GaInAs/AlGaAs multiple quantum well structures and GaInAsP layers grown by solid source molecular beam epitaxy
by: Shi, Wei.
Published: (2008) -
A study of dilute nitride-antimonide semiconductors for near infrared optoelectronics devices
by: Tan, Kian Hua
Published: (2010) -
Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy
by: Miao, Yubo.
Published: (2009)