Core level shift of diamond and graphite upon Ar+ ion bombardment

Diamond-like films (DLF) and highly oriented pyrolytic graphite (HOPG) are made of two allotropes of carbon, diamond and graphite. Each of Bulk DFL and Bulk HOPG which is untreated has a XPS spectra corresponding to some coordination numbers (CN). After the Ar+ bombardment, atomic hole defect, inclu...

Full description

Saved in:
Bibliographic Details
Main Author: Geng, Han He.
Other Authors: Sun Changqing
Format: Final Year Project
Language:English
Published: 2010
Subjects:
Online Access:http://hdl.handle.net/10356/39501
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-39501
record_format dspace
spelling sg-ntu-dr.10356-395012023-07-07T16:12:31Z Core level shift of diamond and graphite upon Ar+ ion bombardment Geng, Han He. Sun Changqing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Diamond-like films (DLF) and highly oriented pyrolytic graphite (HOPG) are made of two allotropes of carbon, diamond and graphite. Each of Bulk DFL and Bulk HOPG which is untreated has a XPS spectra corresponding to some coordination numbers (CN). After the Ar+ bombardment, atomic hole defect, including single atomic hole and multi-atomic hole, occurs for both of DFL and HOPG. Atomic hole defect will cause core level shift due to the quantum trapping effect and polarization. This leads to the change of CN of some atoms of DFL and HOPG samples. As a result, the XPS spectra will change. With different doses of Ar+ ions, different XPS spectra’s are obtained. Difference spectra and peak fitting are used for the analysis of XPS spectra. The software Getdata is used to digitalize figures and explore data from figures. Other than that, the software Origin is used to plot and analyze XPS spectra graphs. Based on the data obtained from the experiment, Bond order-length-strength (BOLS) theory is used to calculate the binding energy of C1s electron with different CN’s, which are useful for further investigation in this field such as the layer- resolved Raman shift. Bachelor of Engineering 2010-05-27T07:18:45Z 2010-05-27T07:18:45Z 2010 2010 Final Year Project (FYP) http://hdl.handle.net/10356/39501 en Nanyang Technological University 66 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Geng, Han He.
Core level shift of diamond and graphite upon Ar+ ion bombardment
description Diamond-like films (DLF) and highly oriented pyrolytic graphite (HOPG) are made of two allotropes of carbon, diamond and graphite. Each of Bulk DFL and Bulk HOPG which is untreated has a XPS spectra corresponding to some coordination numbers (CN). After the Ar+ bombardment, atomic hole defect, including single atomic hole and multi-atomic hole, occurs for both of DFL and HOPG. Atomic hole defect will cause core level shift due to the quantum trapping effect and polarization. This leads to the change of CN of some atoms of DFL and HOPG samples. As a result, the XPS spectra will change. With different doses of Ar+ ions, different XPS spectra’s are obtained. Difference spectra and peak fitting are used for the analysis of XPS spectra. The software Getdata is used to digitalize figures and explore data from figures. Other than that, the software Origin is used to plot and analyze XPS spectra graphs. Based on the data obtained from the experiment, Bond order-length-strength (BOLS) theory is used to calculate the binding energy of C1s electron with different CN’s, which are useful for further investigation in this field such as the layer- resolved Raman shift.
author2 Sun Changqing
author_facet Sun Changqing
Geng, Han He.
format Final Year Project
author Geng, Han He.
author_sort Geng, Han He.
title Core level shift of diamond and graphite upon Ar+ ion bombardment
title_short Core level shift of diamond and graphite upon Ar+ ion bombardment
title_full Core level shift of diamond and graphite upon Ar+ ion bombardment
title_fullStr Core level shift of diamond and graphite upon Ar+ ion bombardment
title_full_unstemmed Core level shift of diamond and graphite upon Ar+ ion bombardment
title_sort core level shift of diamond and graphite upon ar+ ion bombardment
publishDate 2010
url http://hdl.handle.net/10356/39501
_version_ 1772829027477749760