Core level shift of diamond and graphite upon Ar+ ion bombardment
Diamond-like films (DLF) and highly oriented pyrolytic graphite (HOPG) are made of two allotropes of carbon, diamond and graphite. Each of Bulk DFL and Bulk HOPG which is untreated has a XPS spectra corresponding to some coordination numbers (CN). After the Ar+ bombardment, atomic hole defect, inclu...
Saved in:
Main Author: | Geng, Han He. |
---|---|
Other Authors: | Sun Changqing |
Format: | Final Year Project |
Language: | English |
Published: |
2010
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/39501 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Application of phase shift masking to sub-micron contact level lithography
by: Choo, Lay Cheng.
Published: (2008) -
Deposition of highly oriented diamond films by microwave plasma enhanced CVD
by: Liao, Xiao Ning.
Published: (2010) -
Diamond film growth by microwave plasma enhanced chemical vapour deposition
by: Tan, Fong Hock.
Published: (2009) -
Self-heating and trapping effect in AlGaN/GaN high electron mobility transistors on CVD-diamond
by: Kumud Ranjan
Published: (2020) -
ARXPS analysis of surface compositional change in Ar+ ion bombarded GaAs (100)
by: Pan, J.S., et al.
Published: (2014)