Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors

Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors

The results described in this work demonstrate the comprehensive characterization of C-doped GaAs and In0.53Ga0.47As materials and C-doped GaAs-based and InP-based HBT devices grown by SSMBE system using CBr4 as p-type dopant precursor. The characteristics of C-doped GaAs materials, such as the hole...

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Main Author: Zhang, Rong
Other Authors: Yoon Soon Fatt
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:https://hdl.handle.net/10356/3996
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-39962023-07-04T16:43:32Z Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors Zhang, Rong Yoon Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors The results described in this work demonstrate the comprehensive characterization of C-doped GaAs and In0.53Ga0.47As materials and C-doped GaAs-based and InP-based HBT devices grown by SSMBE system using CBr4 as p-type dopant precursor. The characteristics of C-doped GaAs materials, such as the hole concentration, mobility, lattice mismatch, surface morphology, and optical properties, have been comprehensively investigated using various techniques, which help to gain me insight and understanding of the material properties. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:42:06Z 2008-09-17T09:42:06Z 2005 2005 Thesis Zhang, R. (2005). Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3996 10.32657/10356/3996 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Zhang, Rong
Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors
description The results described in this work demonstrate the comprehensive characterization of C-doped GaAs and In0.53Ga0.47As materials and C-doped GaAs-based and InP-based HBT devices grown by SSMBE system using CBr4 as p-type dopant precursor. The characteristics of C-doped GaAs materials, such as the hole concentration, mobility, lattice mismatch, surface morphology, and optical properties, have been comprehensively investigated using various techniques, which help to gain me insight and understanding of the material properties.
author2 Yoon Soon Fatt
author_facet Yoon Soon Fatt
Zhang, Rong
format Theses and Dissertations
author Zhang, Rong
author_sort Zhang, Rong
title Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors
title_short Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors
title_full Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors
title_fullStr Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors
title_full_unstemmed Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors
title_sort growth and characterization of carbon doped gaas- and inp- based heterojunction bipolar transistors
publishDate 2008
url https://hdl.handle.net/10356/3996
_version_ 1772825657330368512

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