Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors
The results described in this work demonstrate the comprehensive characterization of C-doped GaAs and In0.53Ga0.47As materials and C-doped GaAs-based and InP-based HBT devices grown by SSMBE system using CBr4 as p-type dopant precursor. The characteristics of C-doped GaAs materials, such as the hole...
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | https://hdl.handle.net/10356/3996 |
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| Institution: | Nanyang Technological University |