The role of plasma treatments of Cu interconnects in back-end-of-line reliability

• Main Author: Tan, Kwan Ling.
• Other Authors: School of Materials Science and Engineering
• Format: Final Year Project
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Materials::Plasma treatment; DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films; DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• Online Access: http://hdl.handle.net/10356/40002
• Institution: Nanyang Technological University

Reliability in BEOL interconnects is crucial. The time-dependent dielectric breakdown (TDDB) and electromigration strongly affect the reliability of Cu interconnects. Both rely on the surface condition of Cu with the Cu cap. Therefore, plasma treatment is carried out to improve adhesion between Cu a...