The role of plasma treatments of Cu interconnects in back-end-of-line reliability

• المؤلف الرئيسي: Tan, Kwan Ling.
• مؤلفون آخرون: School of Materials Science and Engineering
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Materials::Plasma treatment; DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films; DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/40002

Reliability in BEOL interconnects is crucial. The time-dependent dielectric breakdown (TDDB) and electromigration strongly affect the reliability of Cu interconnects. Both rely on the surface condition of Cu with the Cu cap. Therefore, plasma treatment is carried out to improve adhesion between Cu a...