Growth and characterization of III-V semiconductor solar cells.

A new Molecular Beam Epitaxy system that can be pumped down to 10-11torr is set up. The ultra high vacuum environment was achieved through multiple rounds of baking before and after material loading into the source cells. Growth calibration was done for doped and undoped GaAs films, where Si and...

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Bibliographic Details
Main Author: Foo, Pey Shan.
Other Authors: Lew Wen Siang
Format: Final Year Project
Language:English
Published: 2010
Subjects:
Online Access:http://hdl.handle.net/10356/40384
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Institution: Nanyang Technological University
Language: English

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