Stress migration study of Cu/Low-k interconnect system

This research focuses on the stress-induced voiding in Cu interconnects. The different types, and the process and geometrical dependency of stress-induced voiding are studied. In addition, in-depth understanding of stress-induced voiding mechanisms and process; approaches to improve stress migratio...

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Main Author: Lim, Yeow Kheng
Other Authors: Pey Kin Leong
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:https://hdl.handle.net/10356/4121
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-4121
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spelling sg-ntu-dr.10356-41212023-07-04T17:37:40Z Stress migration study of Cu/Low-k interconnect system Lim, Yeow Kheng Pey Kin Leong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic systems This research focuses on the stress-induced voiding in Cu interconnects. The different types, and the process and geometrical dependency of stress-induced voiding are studied. In addition, in-depth understanding of stress-induced voiding mechanisms and process; approaches to improve stress migration reliability and, the extendibility and impacts of the approaches to future technologies, are discussed. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:44:56Z 2008-09-17T09:44:56Z 2008 2008 Thesis Lim, Y. K. (2008). Stress migration study of Cu/Low-k interconnect system. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/4121 10.32657/10356/4121 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
Lim, Yeow Kheng
Stress migration study of Cu/Low-k interconnect system
description This research focuses on the stress-induced voiding in Cu interconnects. The different types, and the process and geometrical dependency of stress-induced voiding are studied. In addition, in-depth understanding of stress-induced voiding mechanisms and process; approaches to improve stress migration reliability and, the extendibility and impacts of the approaches to future technologies, are discussed.
author2 Pey Kin Leong
author_facet Pey Kin Leong
Lim, Yeow Kheng
format Theses and Dissertations
author Lim, Yeow Kheng
author_sort Lim, Yeow Kheng
title Stress migration study of Cu/Low-k interconnect system
title_short Stress migration study of Cu/Low-k interconnect system
title_full Stress migration study of Cu/Low-k interconnect system
title_fullStr Stress migration study of Cu/Low-k interconnect system
title_full_unstemmed Stress migration study of Cu/Low-k interconnect system
title_sort stress migration study of cu/low-k interconnect system
publishDate 2008
url https://hdl.handle.net/10356/4121
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