Application of carbon nanotubes (CNTS) in copper/low k interconnects design

With continuing device scaling from a 90nm to a 65nm node, wiring interconnect becomes increasingly crucial due to the effects on electrical resistance and wiring capacitance. The electrical resistance and parasitic capacitance associated with these metal interconnections has become a major factor...

Full description

Saved in:

Bibliographic Details
Main Author:	Loo, Shane Zhi Yuan
Other Authors:	Sridhar Idapalapati
Format:	Theses and Dissertations
Language:	English
Published:	2010
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Nanotechnology
Online Access:	https://hdl.handle.net/10356/41444
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-41444
record_format	dspace
spelling	sg-ntu-dr.10356-414442023-03-11T17:38:27Z Application of carbon nanotubes (CNTS) in copper/low k interconnects design Loo, Shane Zhi Yuan Sridhar Idapalapati School of Mechanical and Aerospace Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Nanotechnology With continuing device scaling from a 90nm to a 65nm node, wiring interconnect becomes increasingly crucial due to the effects on electrical resistance and wiring capacitance. The electrical resistance and parasitic capacitance associated with these metal interconnections has become a major factor that limits the circuit speed of such high performance IC's. This limitation is one of the motivating factor for microelectronics industry's move away from aluminium/silicon dioxide interconnects to Cu and low-k dielectrics material systems. MASTER OF ENGINEERING (MAE) 2010-07-05T04:54:58Z 2010-07-05T04:54:58Z 2008 2008 Thesis Loo, S. Z. Y. (2008). Application of carbon nanotubes (CNTS) in copper/low k interconnects design. Master’s thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/41444 10.32657/10356/41444 en 177 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Nanotechnology
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Nanotechnology Loo, Shane Zhi Yuan Application of carbon nanotubes (CNTS) in copper/low k interconnects design
description	With continuing device scaling from a 90nm to a 65nm node, wiring interconnect becomes increasingly crucial due to the effects on electrical resistance and wiring capacitance. The electrical resistance and parasitic capacitance associated with these metal interconnections has become a major factor that limits the circuit speed of such high performance IC's. This limitation is one of the motivating factor for microelectronics industry's move away from aluminium/silicon dioxide interconnects to Cu and low-k dielectrics material systems.
author2	Sridhar Idapalapati
author_facet	Sridhar Idapalapati Loo, Shane Zhi Yuan
format	Theses and Dissertations
author	Loo, Shane Zhi Yuan
author_sort	Loo, Shane Zhi Yuan
title	Application of carbon nanotubes (CNTS) in copper/low k interconnects design
title_short	Application of carbon nanotubes (CNTS) in copper/low k interconnects design
title_full	Application of carbon nanotubes (CNTS) in copper/low k interconnects design
title_fullStr	Application of carbon nanotubes (CNTS) in copper/low k interconnects design
title_full_unstemmed	Application of carbon nanotubes (CNTS) in copper/low k interconnects design
title_sort	application of carbon nanotubes (cnts) in copper/low k interconnects design
publishDate	2010
url	https://hdl.handle.net/10356/41444
_version_	1761781549648314368

Application of carbon nanotubes (CNTS) in copper/low k interconnects design

Similar Items