Characterization and reliability studies of oxides grown by wet and dry oxidations for 0.25 micrometer CMOS technology

The main focus of this report is to improve the hot-carrier lifetime of a 0.25 micrometer CMOS device.

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Bibliographic Details
Main Author:	Chow, Yew Tuck.
Other Authors:	Prasad, Krishnamachar
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Online Access:	http://hdl.handle.net/10356/4166
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-4166
record_format	dspace
spelling	sg-ntu-dr.10356-41662023-07-04T15:54:57Z Characterization and reliability studies of oxides grown by wet and dry oxidations for 0.25 micrometer CMOS technology Chow, Yew Tuck. Prasad, Krishnamachar School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials The main focus of this report is to improve the hot-carrier lifetime of a 0.25 micrometer CMOS device. Master of Science (Microelectronics) 2008-09-17T09:45:56Z 2008-09-17T09:45:56Z 2004 2004 Thesis http://hdl.handle.net/10356/4166 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials Chow, Yew Tuck. Characterization and reliability studies of oxides grown by wet and dry oxidations for 0.25 micrometer CMOS technology
description	The main focus of this report is to improve the hot-carrier lifetime of a 0.25 micrometer CMOS device.
author2	Prasad, Krishnamachar
author_facet	Prasad, Krishnamachar Chow, Yew Tuck.
format	Theses and Dissertations
author	Chow, Yew Tuck.
author_sort	Chow, Yew Tuck.
title	Characterization and reliability studies of oxides grown by wet and dry oxidations for 0.25 micrometer CMOS technology
title_short	Characterization and reliability studies of oxides grown by wet and dry oxidations for 0.25 micrometer CMOS technology
title_full	Characterization and reliability studies of oxides grown by wet and dry oxidations for 0.25 micrometer CMOS technology
title_fullStr	Characterization and reliability studies of oxides grown by wet and dry oxidations for 0.25 micrometer CMOS technology
title_full_unstemmed	Characterization and reliability studies of oxides grown by wet and dry oxidations for 0.25 micrometer CMOS technology
title_sort	characterization and reliability studies of oxides grown by wet and dry oxidations for 0.25 micrometer cmos technology
publishDate	2008
url	http://hdl.handle.net/10356/4166
_version_	1772826521332875264

Characterization and reliability studies of oxides grown by wet and dry oxidations for 0.25 micrometer CMOS technology

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