Study of breakdown in ultrathin gate dielectrics in nanoscale MOSFETs

• المؤلف الرئيسي: Lo, Vui Lip
• مؤلفون آخرون: Tung Chih Hang
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/41807

Progressive breakdown has been found to provide an extra post-breakdown reliability margin for devices with ultrathin gate oxide. It is primarily constituted by two major regions, which are digital and analog breakdown. In this project, the progressive breakdown in the ultrathin gate oxide is thorou...