Study of breakdown in ultrathin gate dielectrics in nanoscale MOSFETs

Progressive breakdown has been found to provide an extra post-breakdown reliability margin for devices with ultrathin gate oxide. It is primarily constituted by two major regions, which are digital and analog breakdown. In this project, the progressive breakdown in the ultrathin gate oxide is thorou...

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Bibliographic Details
Main Author: Lo, Vui Lip
Other Authors: Tung Chih Hang
Format: Theses and Dissertations
Language:English
Published: 2010
Subjects:
Online Access:https://hdl.handle.net/10356/41807
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Institution: Nanyang Technological University
Language: English
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