Investigation of low temperature wafer bonding using intermediate layer

In this project, the sol-gel intermediate layer bonding is demonstrated to provide high bond strength at low temperature (such as 100 degree celsius).

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Bibliographic Details
Main Author: Deng, Shusheng
Other Authors: Tan, Cher Ming
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/4209
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-42092023-07-04T15:09:57Z Investigation of low temperature wafer bonding using intermediate layer Deng, Shusheng Tan, Cher Ming School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors In this project, the sol-gel intermediate layer bonding is demonstrated to provide high bond strength at low temperature (such as 100 degree celsius). Master of Engineering 2008-09-17T09:46:43Z 2008-09-17T09:46:43Z 2004 2004 Thesis http://hdl.handle.net/10356/4209 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Deng, Shusheng
Investigation of low temperature wafer bonding using intermediate layer
description In this project, the sol-gel intermediate layer bonding is demonstrated to provide high bond strength at low temperature (such as 100 degree celsius).
author2 Tan, Cher Ming
author_facet Tan, Cher Ming
Deng, Shusheng
format Theses and Dissertations
author Deng, Shusheng
author_sort Deng, Shusheng
title Investigation of low temperature wafer bonding using intermediate layer
title_short Investigation of low temperature wafer bonding using intermediate layer
title_full Investigation of low temperature wafer bonding using intermediate layer
title_fullStr Investigation of low temperature wafer bonding using intermediate layer
title_full_unstemmed Investigation of low temperature wafer bonding using intermediate layer
title_sort investigation of low temperature wafer bonding using intermediate layer
publishDate 2008
url http://hdl.handle.net/10356/4209
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