Investigation of low temperature wafer bonding using intermediate layer
In this project, the sol-gel intermediate layer bonding is demonstrated to provide high bond strength at low temperature (such as 100 degree celsius).
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2008
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sg-ntu-dr.10356-42092023-07-04T15:09:57Z Investigation of low temperature wafer bonding using intermediate layer Deng, Shusheng Tan, Cher Ming School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors In this project, the sol-gel intermediate layer bonding is demonstrated to provide high bond strength at low temperature (such as 100 degree celsius). Master of Engineering 2008-09-17T09:46:43Z 2008-09-17T09:46:43Z 2004 2004 Thesis http://hdl.handle.net/10356/4209 Nanyang Technological University application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Deng, Shusheng Investigation of low temperature wafer bonding using intermediate layer |
description |
In this project, the sol-gel intermediate layer bonding is demonstrated to provide high bond strength at low temperature (such as 100 degree celsius). |
author2 |
Tan, Cher Ming |
author_facet |
Tan, Cher Ming Deng, Shusheng |
format |
Theses and Dissertations |
author |
Deng, Shusheng |
author_sort |
Deng, Shusheng |
title |
Investigation of low temperature wafer bonding using intermediate layer |
title_short |
Investigation of low temperature wafer bonding using intermediate layer |
title_full |
Investigation of low temperature wafer bonding using intermediate layer |
title_fullStr |
Investigation of low temperature wafer bonding using intermediate layer |
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Investigation of low temperature wafer bonding using intermediate layer |
title_sort |
investigation of low temperature wafer bonding using intermediate layer |
publishDate |
2008 |
url |
http://hdl.handle.net/10356/4209 |
_version_ |
1772829009761009664 |