Study of ruthenium-based barrier layer for copper metallization
Bilayer of Ta/TaN is the common diffusion barrier for Cu metallization in microelectronics. However, this bilayer is not conducive for electrochemical plating of Cu as it has a poor seeding ability. Consequently, an additional seed layer becomes inevitable. As the feature size of interconnects has b...
Saved in:
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2010
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/42241 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|