Study of ruthenium-based barrier layer for copper metallization
Bilayer of Ta/TaN is the common diffusion barrier for Cu metallization in microelectronics. However, this bilayer is not conducive for electrochemical plating of Cu as it has a poor seeding ability. Consequently, an additional seed layer becomes inevitable. As the feature size of interconnects has b...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2010
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| Online Access: | https://hdl.handle.net/10356/42241 |
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| Institution: | Nanyang Technological University |
| Language: | English |