Study of ruthenium-based barrier layer for copper metallization

• Main Author: Martina Damayanti
• Other Authors: Subodh Gautam Mhaisalkar
• Format: Theses and Dissertations
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/42241
• Institution: Nanyang Technological University

Bilayer of Ta/TaN is the common diffusion barrier for Cu metallization in microelectronics. However, this bilayer is not conducive for electrochemical plating of Cu as it has a poor seeding ability. Consequently, an additional seed layer becomes inevitable. As the feature size of interconnects has b...