Metal gate for advanced CMOS applications

A potential metal gate candidate must possess good thermal stability to withstand high anneal temperature and it must also have an effective workfunction (EWF) that is near to the silicon band edges. DC sputtered tungsten nitride (W2N) metal gate on high- K dielectrics is investigated for this ap...

Full description

Saved in:
Bibliographic Details
Main Author: Lai, Donny Jiancheng
Other Authors: Lee Pooi See
Format: Theses and Dissertations
Language:English
Published: 2010
Subjects:
Online Access:http://hdl.handle.net/10356/42280
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English