Metal gate for advanced CMOS applications
A potential metal gate candidate must possess good thermal stability to withstand high anneal temperature and it must also have an effective workfunction (EWF) that is near to the silicon band edges. DC sputtered tungsten nitride (W2N) metal gate on high- K dielectrics is investigated for this ap...
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| Other Authors: | |
| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/42280 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | A potential metal gate candidate must possess good thermal stability to withstand
high anneal temperature and it must also have an effective workfunction (EWF) that is
near to the silicon band edges. DC sputtered tungsten nitride (W2N) metal gate on high-
K dielectrics is investigated for this application. Rutherford backscattering (RBS) data
reveals that oxygen incorporation into tungsten nitride films occurred after the rapid
thermal anneal (RTA) treatment and yet the resulting tungsten oxynitride
(W0.377O0.322N0.301) maintained its conductivity. Nonetheless, the effective gate oxide
thickness increases with the presence of the oxynitride (SiON). To rectify this issue and
reduce the leakage current density, a ruthenium (Ru) capping layer was introduced. |
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