Analysis of semiconductor materials and devices
Waveguide Photodetector (WGPD) has gathered increased attention due to the high demand in large bandwidth network capabilities as it is able to operate in a very wide range of frequencies. However, this leads to the problem of reflection which results in power loss during transfer. In order to mi...
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sg-ntu-dr.10356-428722023-07-07T15:48:25Z Analysis of semiconductor materials and devices Guo, Boyang. Yoon Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Waveguide Photodetector (WGPD) has gathered increased attention due to the high demand in large bandwidth network capabilities as it is able to operate in a very wide range of frequencies. However, this leads to the problem of reflection which results in power loss during transfer. In order to minimize the effects of reflection, impedance matching has to be incorporated in the overall design of the system so as to achieve maximum power transfer. In this thesis, the experimental data of a 1.55 μm GaNAsSb/GaAs WGPD, with operating frequency ranging from 100MHz to 10GHz, is used to simulate the matching impedance circuit using the Advanced Design System (ADS) software. Background study will be done on the Smith chart and impedance matching. More emphasis will be placed on studying the concept of impedance matching, impedance matching techniques and return loss relation to impedance matching. The simulation will be divided into two parts. The first part will be designing a matching circuit for single frequency impedance matching. The second part will be a build-up of the single frequency matching circuit to design a impedance matching circuit for a wideband frequency range of 100MHz to 10GHz. Simulation will be done using the chosen impedance matching technique (L network) to verify the effectiveness of matching the input and output impedance. Simulation has shown that the chosen matching technique provides a good impedance matching for both the single frequency and the wideband frequency. Bachelor of Engineering 2011-01-28T02:41:45Z 2011-01-28T02:41:45Z 2010 2010 Final Year Project (FYP) http://hdl.handle.net/10356/42872 en Nanyang Technological University 70 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Guo, Boyang. Analysis of semiconductor materials and devices |
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Waveguide Photodetector (WGPD) has gathered increased attention due to the high
demand in large bandwidth network capabilities as it is able to operate in a very wide
range of frequencies. However, this leads to the problem of reflection which results
in power loss during transfer. In order to minimize the effects of reflection,
impedance matching has to be incorporated in the overall design of the system so as
to achieve maximum power transfer.
In this thesis, the experimental data of a 1.55 μm GaNAsSb/GaAs WGPD, with
operating frequency ranging from 100MHz to 10GHz, is used to simulate the
matching impedance circuit using the Advanced Design System (ADS) software.
Background study will be done on the Smith chart and impedance matching. More
emphasis will be placed on studying the concept of impedance matching, impedance
matching techniques and return loss relation to impedance matching. The simulation
will be divided into two parts.
The first part will be designing a matching circuit for single frequency impedance
matching. The second part will be a build-up of the single frequency matching circuit
to design a impedance matching circuit for a wideband frequency range of 100MHz
to 10GHz. Simulation will be done using the chosen impedance matching technique
(L network) to verify the effectiveness of matching the input and output impedance.
Simulation has shown that the chosen matching technique provides a good
impedance matching for both the single frequency and the wideband frequency. |
author2 |
Yoon Soon Fatt |
author_facet |
Yoon Soon Fatt Guo, Boyang. |
format |
Final Year Project |
author |
Guo, Boyang. |
author_sort |
Guo, Boyang. |
title |
Analysis of semiconductor materials and devices |
title_short |
Analysis of semiconductor materials and devices |
title_full |
Analysis of semiconductor materials and devices |
title_fullStr |
Analysis of semiconductor materials and devices |
title_full_unstemmed |
Analysis of semiconductor materials and devices |
title_sort |
analysis of semiconductor materials and devices |
publishDate |
2011 |
url |
http://hdl.handle.net/10356/42872 |
_version_ |
1772826043295465472 |