Analysis of semiconductor materials and devices

Waveguide Photodetector (WGPD) has gathered increased attention due to the high demand in large bandwidth network capabilities as it is able to operate in a very wide range of frequencies. However, this leads to the problem of reflection which results in power loss during transfer. In order to mi...

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Main Author: Guo, Boyang.
Other Authors: Yoon Soon Fatt
Format: Final Year Project
Language:English
Published: 2011
Subjects:
Online Access:http://hdl.handle.net/10356/42872
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-428722023-07-07T15:48:25Z Analysis of semiconductor materials and devices Guo, Boyang. Yoon Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Waveguide Photodetector (WGPD) has gathered increased attention due to the high demand in large bandwidth network capabilities as it is able to operate in a very wide range of frequencies. However, this leads to the problem of reflection which results in power loss during transfer. In order to minimize the effects of reflection, impedance matching has to be incorporated in the overall design of the system so as to achieve maximum power transfer. In this thesis, the experimental data of a 1.55 μm GaNAsSb/GaAs WGPD, with operating frequency ranging from 100MHz to 10GHz, is used to simulate the matching impedance circuit using the Advanced Design System (ADS) software. Background study will be done on the Smith chart and impedance matching. More emphasis will be placed on studying the concept of impedance matching, impedance matching techniques and return loss relation to impedance matching. The simulation will be divided into two parts. The first part will be designing a matching circuit for single frequency impedance matching. The second part will be a build-up of the single frequency matching circuit to design a impedance matching circuit for a wideband frequency range of 100MHz to 10GHz. Simulation will be done using the chosen impedance matching technique (L network) to verify the effectiveness of matching the input and output impedance. Simulation has shown that the chosen matching technique provides a good impedance matching for both the single frequency and the wideband frequency. Bachelor of Engineering 2011-01-28T02:41:45Z 2011-01-28T02:41:45Z 2010 2010 Final Year Project (FYP) http://hdl.handle.net/10356/42872 en Nanyang Technological University 70 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Guo, Boyang.
Analysis of semiconductor materials and devices
description Waveguide Photodetector (WGPD) has gathered increased attention due to the high demand in large bandwidth network capabilities as it is able to operate in a very wide range of frequencies. However, this leads to the problem of reflection which results in power loss during transfer. In order to minimize the effects of reflection, impedance matching has to be incorporated in the overall design of the system so as to achieve maximum power transfer. In this thesis, the experimental data of a 1.55 μm GaNAsSb/GaAs WGPD, with operating frequency ranging from 100MHz to 10GHz, is used to simulate the matching impedance circuit using the Advanced Design System (ADS) software. Background study will be done on the Smith chart and impedance matching. More emphasis will be placed on studying the concept of impedance matching, impedance matching techniques and return loss relation to impedance matching. The simulation will be divided into two parts. The first part will be designing a matching circuit for single frequency impedance matching. The second part will be a build-up of the single frequency matching circuit to design a impedance matching circuit for a wideband frequency range of 100MHz to 10GHz. Simulation will be done using the chosen impedance matching technique (L network) to verify the effectiveness of matching the input and output impedance. Simulation has shown that the chosen matching technique provides a good impedance matching for both the single frequency and the wideband frequency.
author2 Yoon Soon Fatt
author_facet Yoon Soon Fatt
Guo, Boyang.
format Final Year Project
author Guo, Boyang.
author_sort Guo, Boyang.
title Analysis of semiconductor materials and devices
title_short Analysis of semiconductor materials and devices
title_full Analysis of semiconductor materials and devices
title_fullStr Analysis of semiconductor materials and devices
title_full_unstemmed Analysis of semiconductor materials and devices
title_sort analysis of semiconductor materials and devices
publishDate 2011
url http://hdl.handle.net/10356/42872
_version_ 1772826043295465472