Effect of thermal-induced stress on SOI power devices
Silicon-on-insulator (SOI) technology presents one way of fabricating semiconductor devices on an insulating substrate rather than in a semiconductor bulk. It is a promising potential technology for the next generation ULSI because of its many advantages over its bulk silicon substrate counterpart,...
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2011
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/42905 |
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| 機構: | Nanyang Technological University |
| 語言: | English |