Effect of thermal-induced stress on SOI power devices

• Main Author: Huang, Guangyu
• Other Authors: Tan Cher Ming
• Format: Theses and Dissertations
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
• Online Access: https://hdl.handle.net/10356/42905
• Institution: Nanyang Technological University

Silicon-on-insulator (SOI) technology presents one way of fabricating semiconductor devices on an insulating substrate rather than in a semiconductor bulk. It is a promising potential technology for the next generation ULSI because of its many advantages over its bulk silicon substrate counterpart,...