Effect of thermal-induced stress on SOI power devices

• المؤلف الرئيسي: Huang, Guangyu
• مؤلفون آخرون: Tan Cher Ming
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/42905

Silicon-on-insulator (SOI) technology presents one way of fabricating semiconductor devices on an insulating substrate rather than in a semiconductor bulk. It is a promising potential technology for the next generation ULSI because of its many advantages over its bulk silicon substrate counterpart,...