Determination of carrier lifetime in power semiconductor devices

Determination of carrier lifetime in power semiconductor devices

In this project, a comparative study on the three ramp reverse recovery methods and Open Circuit Voltage Decay (ECVD) will be carried out to the P+NN+ power diode with a uniform lifetime profile and a non-uniform lifetime profile using simulations done by the Medici Numerical Simulator. The importan...

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Main Author: Goh, Chee Hiong.
Other Authors: Tan, Cher Ming
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:http://hdl.handle.net/10356/4294
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-42942023-07-04T15:10:46Z Determination of carrier lifetime in power semiconductor devices Goh, Chee Hiong. Tan, Cher Ming School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors In this project, a comparative study on the three ramp reverse recovery methods and Open Circuit Voltage Decay (ECVD) will be carried out to the P+NN+ power diode with a uniform lifetime profile and a non-uniform lifetime profile using simulations done by the Medici Numerical Simulator. The importance of considering a non-uniform lifetime profile is to suit the new fabrication techniques. Master of Science (Microelectronics) 2008-09-17T09:48:43Z 2008-09-17T09:48:43Z 2003 2003 Thesis http://hdl.handle.net/10356/4294 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Goh, Chee Hiong.
Determination of carrier lifetime in power semiconductor devices
description In this project, a comparative study on the three ramp reverse recovery methods and Open Circuit Voltage Decay (ECVD) will be carried out to the P+NN+ power diode with a uniform lifetime profile and a non-uniform lifetime profile using simulations done by the Medici Numerical Simulator. The importance of considering a non-uniform lifetime profile is to suit the new fabrication techniques.
author2 Tan, Cher Ming
author_facet Tan, Cher Ming
Goh, Chee Hiong.
format Theses and Dissertations
author Goh, Chee Hiong.
author_sort Goh, Chee Hiong.
title Determination of carrier lifetime in power semiconductor devices
title_short Determination of carrier lifetime in power semiconductor devices
title_full Determination of carrier lifetime in power semiconductor devices
title_fullStr Determination of carrier lifetime in power semiconductor devices
title_full_unstemmed Determination of carrier lifetime in power semiconductor devices
title_sort determination of carrier lifetime in power semiconductor devices
publishDate 2008
url http://hdl.handle.net/10356/4294
_version_ 1772825534851448832

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