Characterization of gate oxide degradation caused by electrical stress

Characterization of gate oxide degradation caused by electrical stress

In this thesis, the degradation of ultrathin gate oxide caused by electrical stress has been studied in detail. Interface trap generation and oxide charge trapping in the gate oxide are the two key issues for electrical stress-induced degradation. In this work, gate-controlled-diode (GCD) and direct...

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Main Author: Huang, Jiayi.
Other Authors: Chen, Tupei
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:http://hdl.handle.net/10356/4396
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-4396
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spelling sg-ntu-dr.10356-43962023-07-04T15:52:52Z Characterization of gate oxide degradation caused by electrical stress Huang, Jiayi. Chen, Tupei School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics In this thesis, the degradation of ultrathin gate oxide caused by electrical stress has been studied in detail. Interface trap generation and oxide charge trapping in the gate oxide are the two key issues for electrical stress-induced degradation. In this work, gate-controlled-diode (GCD) and direct-current current-voltage (DCIV) techniques have been used. Master of Engineering 2008-09-17T09:50:41Z 2008-09-17T09:50:41Z 2003 2003 Thesis http://hdl.handle.net/10356/4396 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Huang, Jiayi.
Characterization of gate oxide degradation caused by electrical stress
description In this thesis, the degradation of ultrathin gate oxide caused by electrical stress has been studied in detail. Interface trap generation and oxide charge trapping in the gate oxide are the two key issues for electrical stress-induced degradation. In this work, gate-controlled-diode (GCD) and direct-current current-voltage (DCIV) techniques have been used.
author2 Chen, Tupei
author_facet Chen, Tupei
Huang, Jiayi.
format Theses and Dissertations
author Huang, Jiayi.
author_sort Huang, Jiayi.
title Characterization of gate oxide degradation caused by electrical stress
title_short Characterization of gate oxide degradation caused by electrical stress
title_full Characterization of gate oxide degradation caused by electrical stress
title_fullStr Characterization of gate oxide degradation caused by electrical stress
title_full_unstemmed Characterization of gate oxide degradation caused by electrical stress
title_sort characterization of gate oxide degradation caused by electrical stress
publishDate 2008
url http://hdl.handle.net/10356/4396
_version_ 1772825946762510336

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