Development and characterization of GaN high electron mobility transistors for low noise applications

• المؤلف الرئيسي: Liu, Zhihong
• مؤلفون آخرون: Ng Geok Ing
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/44001
• المؤسسة: Nanyang Technological University

This thesis presents the fabrication, detailed characterization and analysis of AlGaN/GaN high electron mobility transistors (HEMTs) and metal-insulator-semiconductor HEMTs (MISHEMTs) for microwave low-noise applications. The major contributions of this thesis are given below: (1) Fabrication proces...