Development and characterization of GaN high electron mobility transistors for low noise applications

This thesis presents the fabrication, detailed characterization and analysis of AlGaN/GaN high electron mobility transistors (HEMTs) and metal-insulator-semiconductor HEMTs (MISHEMTs) for microwave low-noise applications. The major contributions of this thesis are given below: (1) Fabrication proces...

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Bibliographic Details
Main Author: Liu, Zhihong
Other Authors: Ng Geok Ing
Format: Theses and Dissertations
Language:English
Published: 2011
Subjects:
Online Access:https://hdl.handle.net/10356/44001
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Institution: Nanyang Technological University
Language: English

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