Development and characterization of GaN high electron mobility transistors for low noise applications

• 主要作者: Liu, Zhihong
• 其他作者: Ng Geok Ing
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2011
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• 在線閱讀: https://hdl.handle.net/10356/44001
• 機構: Nanyang Technological University

This thesis presents the fabrication, detailed characterization and analysis of AlGaN/GaN high electron mobility transistors (HEMTs) and metal-insulator-semiconductor HEMTs (MISHEMTs) for microwave low-noise applications. The major contributions of this thesis are given below: (1) Fabrication proces...