Scanning capacitance microscopy and related technologies for semiconductor device characterizations
This work reports on applying scanning capacitance microscopy (SCM), one relatively new technology to silicon device characterization. As an extension of scanning probe microscopy (SPM), scanning capacitance microscopy (SCM) has the unique ability to map high-resolution two-dimensional dopant profil...
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/4447 |
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| Institution: | Nanyang Technological University |
| Summary: | This work reports on applying scanning capacitance microscopy (SCM), one relatively new technology to silicon device characterization. As an extension of scanning probe microscopy (SPM), scanning capacitance microscopy (SCM) has the unique ability to map high-resolution two-dimensional dopant profile of semiconductor device. |
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