Scanning capacitance microscopy and related technologies for semiconductor device characterizations

• Main Author: Jiang, Yaoyao
• Other Authors: Zhu, Weiguang
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/4447
• Institution: Nanyang Technological University

This work reports on applying scanning capacitance microscopy (SCM), one relatively new technology to silicon device characterization. As an extension of scanning probe microscopy (SPM), scanning capacitance microscopy (SCM) has the unique ability to map high-resolution two-dimensional dopant profil...